Nanocrystalline graphite films nucleation by the radio frequency bias pretreatment.
This paper describes an engineering method for nucleating nanocrystalline carbon films on monocrystalline silicon using a combination of microwave and radio frequency plasma-assisted chemical vapor deposition. The approach is demonstrated via deposition of nanocrystalline diamond after a seeding step and growth of nanocrystalline graphite films. The deposited nanocrystalline graphite films are reported to show strong electron field emission and good adhesion, with characterization by SEM, TEM, and Raman spectroscopy.
Key points
- A combined microwave and radio frequency plasma-assisted CVD approach is proposed for nucleating nanocrystalline carbon films on silicon.
- The method includes a bias pretreatment/seeding procedure prior to film growth.
- Nanocrystalline diamond deposition is reported immediately after seeding in pure microwave plasma.
- Nanocrystalline graphite films are reported to exhibit electron field emission current density up to 10 A/cm2.
- The films are reported to have good adhesion to the silicon substrate.
- Film and nucleation layers were characterized using SEM, TEM, and Raman spectroscopy.
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AI-generated summaries may be incomplete or incorrect. This content is for informational purposes only and is not medical advice.
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